The F6501 is an 8-element transmitter silicon IC designed using a SiGe BiCMOS process for Ku-Band SATCOM (12.5 to 15GHz) phased array applications. The core IC has 6-bit phase control coupled with 35dB (typical) gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 25dB nominal gain and 13.5dBm OP1dB. The core chip achieves an RMS phase error of 3° and RMS gain error of 0.4dB over the frequency of operation.

The chip operates at 2.1V to 2.5V and features ESD protection on all pins. The core design includes standard SPI protocol that operates up 50MHz with fast-beam switching, fast beam-state loading and fast four on-chip beam storage.


  • 12.5 to 15GHz operation
  • 8 radiation elements
  • 20ns typical gain and phase settling time
  • 3° typical RMS phase error
  • 0.4dB typical RMS gain error
  • 35dB (typical) gain attenuation range
  • 5-bit chip address
  • Integrated PTAT with external biasing
  • Internal temperature sensor
  • Up to 50MHz SPI control
  • Programmable on-chip memory

Product Options

下单器件 ID Part Status Pkg. Code Pkg. Type Lead Count (#) Temp. Grade Carrier Type Buy Sample
F6501AVGK Preview AVG62 FCCSP 62 K Tray
F6501AVGK8 Preview AVG62 FCCSP 62 K Reel


文档标题 他の言語 文档类型 文档格式 文件大小
F6501 Preliminary Short-Form Datasheet Short Form Datasheet PDF 274 KB
IDT Products for Radio Applications 日本語 Product Brief PDF 2.34 MB