The F6103 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for 14GHz to 16GHz SATCOM, Weather Radar, Test and Measurement and other phased array applications. The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 17dB nominal electric gain and -31dBm IP1dB. The core chip achieves an RMS phase error of 3° and RMS gain error of 0.3dB over the frequency of operation.

The chip operates at 2.1 to 2.5 V and features ESD protection on all pins. The core design includes standard SPI protocol that operates up 50MHz with fast-beam switching, fast beam-state loading and fast four on-chip beam storage. The module has four external bias pins (5-bit DACs) to control external LNA’s, temperature reporting and external biasing.


  • 14GHz to 16GHz operation
  • 8 radiation elements
  • 20ns typical gain and phase settling time 
  • 3° typical RMS phase error
  • 0.3dB typical RMS gain error
  • 30dB gain attenuation range
  • 5-bit chip address
  • Integrated PTAT with external biasing
  • Internal temperature sensor
  • Up to 50MHz SPI control
  • Programmable on-chip memory

Product Options

下单器件 ID Part Status Pkg. Code Pkg. Type Lead Count (#) Temp. Grade Carrier Type Buy Sample
F6103NTGK Preview NTG40P2 VFQFPN 40 K Tray
F6103NTGK8 Preview NTG40P2 VFQFPN 40 K Reel


文档标题 他の言語 文档类型 文档格式 文件大小
F6103 Advance Short-Form Datasheet Short Form Datasheet PDF 156 KB
IDT Products for Radio Applications 日本語 Product Brief PDF 2.34 MB