低插入损耗、高线性度的全新RF电压可变衰减器支持1MHz 6GHz,扩展了IDT公司的频率覆盖范围

美国加利福尼亚州圣何塞,2015813 - IDT公司(IDT®)(NASDAQ:IDTI)今天宣布其不断扩大的射频电压可变衰减器(VVA)产品系列新增两款新产品,使IDT公司RF产品的频率覆盖范围扩大到1 MHz至6 GHz。与该产品系列中的其他成员一样,F2255F2258器件都可提供业界领先的低插入损耗和高线性度。

IDT公司的电压可变衰减器可为那些需要精确衰减的应用提供模拟电压控制。两款新器件采用紧凑的3 x 3mm,16引脚TQFN封装,插入损耗仅为竞争解决方案的一半左右,而IP3性能比竞争的砷化镓(GaAs)器件好1000倍(30 dB)以上,并且它们都在电压控制范围内展示了dB线性(线性对数)衰减特性。这些器件的低插入损耗降低了射频链路的损耗,而他们的高线性度则提升了系统的数据速率。

这些全新器件与目前流行的芯片大小匹配,理想适用于基站(2G,3G和4G)、微波基础设施、公共安全、便携式无线通信/数据设备、测试/自动测试设备(ATE)、军用系统、联合作战无线系统(JTRS)以及HF、VHF和UHF无线电等应用。

IDT公司射频事业部总经理Chris Stephens介绍说:“与砷化镓解决方案相比,IDT公司基于硅的RF产品可提供非常出众的性能,如新器件高达30dB的线性度改善。这些器件是当今市场上具有最低插入损耗的VVA产品,并且具有最佳的线性衰减控制特性。”

通过使用基于硅的射频半导体技术,IDT的衰减器提供了一种替代传统砷化镓半导体技术的可靠方案。IDT公司的硅技术具有更佳的RF性能、更强大的静电放电(ESD)保护、更好的潮湿敏感度等级(MSL)、更高的散热性能、更低的电流消耗、以及硅技术经过验证的可靠性等优势。

与引脚兼容的GaAs竞争方案比较,F2258具有高达65dBm的输入IP3,而 GaAs竞争方案仅为35dBm,最大衰减斜率(slope)为33dB/V 对53dB/V ,6000MHz最低返回损耗为12.5dB对7dB,最高工作温度为105℃对85℃。F2255器件支持的频率范围可低至1MHz,并具有33dB/V的最大衰减斜率。F2258和 F2255都具有双向RF端口,支持3V或5V的单一正电源电压供电,工作温度范围是- 40℃至105℃。

About IDT RF Products

IDT offers high-performance and full-featured radio frequency (RF) mixer and gain control products that deliver exceptional performance in compact packages. The RF signal path products include low-power, low-distortion RF to intermediate frequency (IF) mixers, low-noise high-performance intermediate frequency (IF) variable gain amplifiers (VGA), low-noise high-performance digital step attenuators (DSA), and high-performance low-insertion loss RF switches.  These devices are ideal for products such as cellular 4G base stations, broadband repeaters, distributed antenna systems and microwave backhaul equipment.

About IDT

Integrated Device Technology, Inc., develops system-level solutions that optimize its customers’ applications. IDT uses its market leadership in timing, serial switching and interfaces, and adds analog and system expertise to provide complete application-optimized, mixed-signal solutions for the communications, computing and consumer segments. Headquartered in San Jose, Calif., IDT has design, manufacturing, sales facilities and distribution partners throughout the world. IDT stock is traded on the NASDAQ Global Select Stock Market® under the symbol “IDTI.” Additional information about IDT is accessible at www.IDT.com. Follow IDT on Facebook, LinkedIn, Twitter, YouTube  and Google+.

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IDT and the IDT logo are trademarks or registered trademarks of Integrated Device Technology, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact details for publication:
IDT Europe Limited
Phone: +44 (0) 1372 363339
Email: idteurope@idt.com
Website: www.idt.com

Contact details for editorial enquiries:
Dean Solov
IDT Public Relations Manager
Phone: (408) 284-2608
E-mail: Dean.Solov@idt.com

Issued by:
Simon Krelle, Pinnacle Marketing Communications Ltd
Tel: +44 (0) 20 8869 9339
Web: www.pinnacle-marketing.com
E-mail: s.krelle@pinnaclemarcom.com

 

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